p age:p2-p1 plastic-encapsulate transistors features switching transistor) marking:2t maximum ratings (ta=25 unless otherwise noted) parameter symbol value unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -5 v collector current -continuous i c 600 ma collector power dissipation p c 300 mw junction temperature t j 150 storage temperature t stg -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v cbo i c =-100 a , i e =0 -40 v collector-emitter breakdown voltage v ceo i c = -1ma , i b =0 -40 v emitter-base breakdown voltage v ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-35v, i e =0 -0.1 a collector cut-off current i ceo v ce =-35 v, i b =0 -0.1 a emitter cut-off current i ebo v eb =-4v,i c =0 -0.1 a dc current gain h fe v ce =-2v, i c = -150ma 100 300 collector-emitter saturation voltage v ce(sat) i c =-150ma, i b =-15ma -0.4 v base-emitter saturation voltage v be(sat) i c =- 150ma, i b =-15ma -0.95 v transition frequency f t v ce = -10v, i c = -20ma f = 100mhz 200 mhz (pnp) 1. base 2. emitter sot-23 3. collecto MMBT4403 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
page:p2-p2 plastic-encapsulate transistors typical characteristics MMBT4403 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
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